Simulation study of Perovskite/Si Monolithic Multijunction Solar Cell

Abstract

The utilization of perovskite and crystalline-silicon (c-Si) light absorbers in multijunction solar cells presents an exciting opportunity to surpass the efficiency limit of the industry's leading single-junction c-Si solar cells. In this work, we used the Solar Cell Capacitance Simulator (SCAPS-1D) to simulate a monolithic tandem junction solar cell. The solar cell consists of two types of materials: low bandgap and high bandgap. These are layers of perovskites and Si, divided by a window layer of zinc oxide (ZnO), a buffer layer of cadmium sulfide (CdS), a recombination layer of Spiro-MeOTAD/silicon, and a heavily doped back surface field layer formed from n⁺⁺Si to prevent recombination at the back surface. The impact of di fferent series and shunt resistances, as well as perovskite layer thickness and bandgap, on solar cells' photovoltaic performance has been investigated.